Labtory Diamond Band Saw Cutting Machine

Main Features

Small in size, easy to operate, and stable in operation;

Equipped with a rotatable cutting guide, enabling angle or curve cutting;

Fast cutting speed, stable feed rate, thin damage layer on the cut surface, and small dimensional deviation.

Technical Parameters

Purchase Information

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Contact: Zhao Xiaoli

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In the experiment of cutting semiconductor materials, diamond band saw cutting machines are often used to accurately cut high-hardness semiconductor materials such as silicon wafers, gallium arsenide, and sapphire substrates. Since semiconductor materials usually have very fine structures and high conductivity, it is particularly important to control the cutting process to avoid damaging the material or affecting the subsequent processing process.

Experimental cases of cutting semiconductor materials:

1. Silicon wafer cutting experiment

Silicon wafers are the most common material in the semiconductor industry and are usually used to manufacture integrated circuits (ICs) and photovoltaic cells. In order to cut large-sized silicon wafers into small pieces or cut specific shapes, diamond band saw cutting machines are often used for precision cutting.

Experimental equipment:

Diamond band saw cutting machine with water cooling system.

Cutting band: Diamond coated band saw, usually using 30-50μm diamond particles.

Experimental steps:

Prepare materials: Use 3-inch (75mm) or larger silicon wafers as cutting materials.

Set cutting parameters: Adjust the speed, feed rate, and coolant flow of the diamond band saw according to the thickness and hardness of the silicon wafer. Typically, the cutting speed is 0.1 to 0.5 mm/s, and the feed rate is 0.05-0.1 mm/min.

Cooling: Use water or special cutting fluid for cooling to reduce the heat generated during the cutting process and prevent cracks or thermal damage on the silicon wafer surface.

Cutting process: Start the band saw and make precise cuts, which usually result in a very flat cut surface with a cutting width of 0.2-0.5 mm.

Post-processing: After cutting, the silicon wafer is cleaned to remove particles and stains generated during the cutting process.

Experimental results:

After cutting, the surface of the silicon wafer is smooth, without obvious cracks or gaps, the cut surface is smooth and uniform, and the surface roughness reaches Ra 0.1-0.3μm, which is suitable for subsequent packaging and testing.

2. Sapphire substrate cutting experiment

Sapphire substrates are widely used in the LED and optoelectronics industries, especially in the manufacture of high-brightness LED devices. Sapphire is a very hard material, so high-precision cutting technology is required.

Experimental equipment:

High-precision diamond band saw cutting machine.

Diamond band: diamond-coated band saw with finer grains (about 20-40μm).

Experimental steps:

Prepare materials: The size of the sapphire substrate is usually a 2-inch or 4-inch round substrate with a thickness of 0.5-1.5mm.

Set cutting parameters: According to the size and hardness of the substrate, set the feed speed of the band saw to 0.05mm/min, the cutting speed to 0.05mm/s, and use coolant for cutting.

Cooling and lubrication: Use water or cutting oil to cool the sapphire substrate to avoid high temperature causing cracks in the crystal.

Cutting process: The diamond band saw cutter cuts the sapphire substrate at a stable speed, controls the cutting depth and position, and ensures that the size and shape of each substrate meet the requirements.

Post-processing: After cutting, clean the substrate, remove surface impurities, and polish the cut surface.

Experimental results:

The cut sapphire substrate has a flat edge, no cracks on the surface, and a smooth cut surface, which is suitable for subsequent photolithography and packaging processes. The cutting error is controlled within ±0.05mm.

3. Gallium arsenide (GaAs) material cutting experiment

GaAs is a commonly used high-frequency and high-power semiconductor material, widely used in radio frequency (RF) and optoelectronic devices. GaAs has a high hardness and is easily affected by temperature changes, so the temperature and cutting method need to be precisely controlled during the cutting process.

Experimental equipment:

Diamond band saw cutting machine with liquid cooling system.

Band saw with 30-50μm diamond particles.

Experimental steps:

Prepare materials: GaAs sheets are usually 0.5-1mm thick and 2 inches or 4 inches in diameter.

Set cutting parameters: Set an appropriate cutting speed (0.05mm/s) and control the feed speed at 0.02mm/min. Use pure water or special cutting fluid as the coolant with a stable flow rate to prevent thermal damage.

Cutting process: The diamond band saw cutting machine cuts slowly and accurately to ensure that each GaAs sheet will not have cracks or surface defects after cutting.

Post-processing: After cutting, rinse and decontaminate, and use professional surface polishing equipment to polish the cut surface to reduce surface roughness.

Experimental results:

The quality of gallium arsenide after cutting is very high, there is no obvious crack on the cut surface, and the surface roughness is controlled within Ra 0.2μm. Due to the good cooling effect during the cutting process, the gallium arsenide wafer did not have thermal cracks and is suitable for subsequent semiconductor component manufacturing.

Summary:

The diamond band saw cutting machine can provide high-precision and high-efficiency cutting effects when cutting semiconductor materials. It is suitable for the processing of various semiconductor materials such as silicon wafers, gallium arsenide, and sapphire. The key factors include appropriate cutting parameters, the use of cooling systems, and the selection of diamond band saws. By optimizing the cutting process, material waste can be effectively reduced, product quality can be improved, and the cut semiconductor materials can be smoothly packaged and tested.